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HM3407B Datasheet, H&M Semiconductor

HM3407B mosfet equivalent, p-channel enhancement mode power mosfet.

HM3407B Avg. rating / M : 1.0 rating-11

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HM3407B Datasheet

Features and benefits


* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G S Schematic diagram
* High Power and current handing capability
* Lead free.

Application

GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G S Schematic diag.

Description

The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G .

Image gallery

HM3407B Page 1 HM3407B Page 2 HM3407B Page 3

TAGS

HM3407B
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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